Keithley 4200 Pulsed-IV ApplicaitonsGuide free download

File name 4200 Pulsed-IV ApplicaitonsGuide.pdf

www.keithley.com appl icat i ons gui de Pulsed I-V Testing for Components and Semiconductor Devices a g r e a t e r m e a s u r e o f c o n f i d e n c e Pulsed I-V Testing for Components and Semiconductor Devices Pulsed I-V testing is ideal for preventing device self-heating or minimizing charge trapping effects when characterizing devices. By using narrow pulses and/or low duty cycle pulses rather than DC signals, important parameters are extracted while maintaining the DUT performance. Transient I-V measurements allow scientists and engineers to capture ultra-high-speed current or voltage waveforms in the time domain in order to study dynamic properties. This pulsed I-V testing applications e-guide features a concentration of application notes on pulsed I-V testing methods and techniques using Keithley's Model 4200-SCS Parameter Analyzer. Contents Making Proper Electrical Connections to Ensure Semiconductor Device Measurement Integrity . . . . . 3 An Ultra-Fast Single Pulse (UFSP) Technique for Channel Effective Mobility Measurement . . . . . . . . . 7 Performing Charge Pumping Measurements with the Model 4200-SCS Parameter Analyzer . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the Model 4200-SCS Parameter Analyzer . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Pulsed Characterization of Charge-trapping Behavior in High-k Gate Dielectrics . . . . . . . . . . . . . 27 Pulse I-V Characterization of Non-Volatile Memory Technologies . . . . . . . . . . . . . 31 Electrical Characterization of Photovoltaic Materials and Solar Cells with the Model 4200-SCS Parameter Analyzer . . . . . . . . . . . 57 www.keithley.com 1 www.keithley.com Making Proper Electrical Connections to Ensure Semiconductor Device Measurement Integrity Introduction ground return pa Poor-quality electrical connections to the device under test Long th Prober (DUT) can compromise the measurement integrity of even the Bulkhead